By Norman G. Einspruch,Norman Einspruch
Comprised of 8 chapters, this quantity starts with a basic photo of MOS know-how improvement from the gadget and processing issues of view. The serious factor of hot-carrier results is mentioned, besides the equipment engineering facets of this challenge; the rising low-temperature MOS know-how; and the matter of latchup in scaled MOS circuits. numerous gadget types which are compatible to be used in circuit simulators also are defined. The final bankruptcy examines novel electron delivery results saw in ultra-small MOS buildings.
This publication may still turn out worthwhile to semiconductor engineers thinking about assorted facets of MOS know-how improvement, in addition to for researchers during this box and scholars of the corresponding disciplines.
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Advanced MOS Device Physics: 18 (V L S I Electronics) by Norman G. Einspruch,Norman Einspruch